Modeling of Silicon Vapor Phase Epitaxy Using Stefan-Maxwell Formalism
نویسندگان
چکیده
منابع مشابه
Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon
The selective area, metalorganic vapor-phase epitaxy of gallium arsenide on silicon substrates was investigated. Low-temperature arsenic passivation of the silicon surface was realized at 650 1C. A two-step growth method was used to deposit the GaAs films with an optimum nucleation temperature of 400 1C. Layers nucleated at 350 1C or below were found to be polycrystalline whereas those nucleate...
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ژورنال
عنوان ژورنال: MATERIALS TRANSACTIONS
سال: 2004
ISSN: 1345-9678,1347-5320
DOI: 10.2320/matertrans.45.2395